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 TSOP7000SW1
Vishay Semiconductors
IR Receiver for High Data Rate PCM at 455 kHz
Description
The TSOP7000SW1 is a miniaturized receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with high data rates and long distances.
1 2 3
18301
Features
* Photo detector and preamplifier in one package * Internal Bandfilter for PCM frequency * Internal shielding against electrical field disturbance * TTL and CMOS compatibility * Output active low * Small size package
Special Features
* * * * * Data rate 20 kbit/s Supply voltage 2.7 - 5.5 V Short settling time after power on High envelope duty cycle can be received Enhanced immunity against disturbance from energy saving lamps
e3
Block Diagram Application Circuit
16841
3 10 k Input PIN AGC Band Pass Demodulator
VS
16843
1
OUT
Circuit
Transmitter TSOPxxxx with TSHFxxxx
R1 = 47 VS C1 = 4.7 F R2 >= 1 k +VS
OUT GND
C
VO GND
2 Control Circuit
GND
R1 + C1 recommended to suppress power supply disturbances. R2 optional for improved pulse forming.
Document Number 82221 Rev. 1.1, 01-Mar-05
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TSOP7000SW1
Vishay Semiconductors Absolute Maximum Ratings
Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply Voltage Voltage at output to supply Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Power Consumption t 10 s, 1 mm from case Pin 3 Pin 1 Pin 3 Pin 1 Pin 1 Test condition Symbol VS VS - VO IS VO IO Tj Tstg Tamb Tsd Ptot Value - 0.3 to + 6.0 - 0.3 to VS + 0.3 5 - 0.3 to + 6.0 15 100 - 25 to + 85 - 25 to + 85 260 30 Unit V V mA V mA C C C C mW
Electrical and Optical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 3) Supply Voltage (Pin 3) Transmission Distance p= 870 nm, IR Diode TSHF5400, IF = 300 mA p= 950 nm, IR Diode TSAL6400, IF = 300 mA Threshold Irradiance Maximum Irradiance Output Voltage Low (Pin 1) Output Voltage High (Pin 1) Bandpassfilter quality Out-Pulse width tolerance Delay time of output pulse Receiver start up time Falling time Rise time Directivity Optical test signal of Fig.1, 1.5 mW/m2 Ee 30 W/m2 Optical test signal of Fig.1, Ee > 1.5 mW/m2 Valid data after power on Leading edge of output pulse No external pull up resistor 1 k external pull up resistor Angle of half transmission distance tV tf tr tr 1/2 50 0.4 12 1.2 45 s s s s deg tdon 15 36 s p = 870 nm, optical test signal of Fig.1 Optical test signal of Fig.1 1 k external pull up resistor No external pull-up resistor Test condition Dark ambient Ev = 40 klx, sunlight Symbol ISD ISH VS dmax dmax Ee min Ee max VQL VQH Q tpo - 15 VS - 0.25 10 +5 + 15 s 30 100 2.7 Min Typ. 2.0 2.3 5 20 12 0.8 1.5 5.5 Max 2.7 Unit mA mA V m m mW/m2 W/m2 mV V
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Document Number 82221 Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
30 N=10 cycles/burst 25 20 Jitter - tpo 15 10 5 0 0.1 Jitter - tdon 1 1.0 10 100 1000 10000.0 10.0 100.0 1000.0 10000 100000 100000.0 Ee - Irradiance (mW/m2)
Optical Test Signal (f=455kHz, 10 cycles/burst) Ee
tpi = 22 s 2.2 s
> 48.6 s (min. duty cycle)
tdon
t
16792
VQ VQH 50% VQL
tpo = tpi i 15 s
tpo
90% 10%
tf tr
t
16791
Figure 1. Output Function
j tdon, j
tpo -
Output Signal of TSOP7000
Jitter of Output Pulse ( s )
Figure 4. Jitter of Output Pulse
1.0
Optical Test Signal
Ee min / Ee rel - Responsitivity
(IR diode TSHF5400, p 870 nm, IF = 300 mA, f = 455 kHz, 10 cycles/burst)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 350 400 450 500 550 600
Ee
tpi = 22 s
t
Output Signal of TSOP7000 VO VOH VOL
jtdon
jitter of leading edge jtpo jitter of output pulse width
tdon tpo
16755
t
16751
f - Frequency ( kHz )
Figure 2. Output Fucntion (mit Jitter)
Figure 5. Frequency Dependence of Responsivity
Output Pulse Length ( s )
Output pulse width - tpo
E e min - Threshold Irradiance (mW/m 2)
35 30 25 20 15 10 5 0 0.1
14 12 10 8 6 4 2 0 0.01
Correlation with ambient light sources (Disturbanceeffect): 10 W/m2 = 1.4 klx (Stand.illum.A,T = 2855 K) 10 W/m2 = 10 klx (Daylight,T = 5900 K)
Delay time - tdon
t
po
t
don,
N = 10 cycles/burst
1.0 1
16790
10.0 100.0 1000.0 10000 100000 100000.0 10 100 1000 10000.0 Ee - Irradiance (mW/m2)
0.10
1.00
10.00
100.00
16786
E - DC Irradiance (W/m2)
Figure 3. Output Pulse Diagram (tdon, tpo)
Figure 6. Sensitivity in Bright Ambient
Document Number 82221 Rev. 1.1, 01-Mar-05
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TSOP7000SW1
Vishay Semiconductors
E e min - Threshold Irradiance (mW/m 2)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
Sensitivity in dark ambient
S ( ) rel - Relative Spectral Sensitivity
2.0
1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 800 850 900 950 1000 1050 1100 1150 - Wavelength ( nm )
16787
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS - Supply Voltage ( V )
16789
Figure 7. Sensitivity vs. Supply Voltage
Figure 10. Relative Spectral Sensitivity vs. Wavelength
1.1
E e min - Relative Sensitivity
1.0
Relative Transmission Distance
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -90-75-60-45-30-15 0 15 30 45 60 75 90
1.0 0.9 0.8 0.7 0.6 0.5 8 10 12 14 16 18 20 22 24 26 28 N - Burstlength ( carriercycles/burst )
16788
96 12223
Angle (deg)
Figure 8. Rel. Sensitivity vs. Burstlength
Figure 11. Directivity
2.3 2.2
I s - Supply Current ( mA )
2.1 2.0 1.9 1.8 1.7 1.6 1.5 -25 -15 -5
VS = 5.5 V VS = 2.7 V
5 15 25 35 45 55 65 75 85
16754
Tamb - Ambient Temperature ( C )
Figure 9. Supply Current vs. Ambient Temperature
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Document Number 82221 Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors Recommendation for Suitable Data Formats
The circuit of the TSOP7000SW1 is designed in that way that disturbance signals are identified and unwated output pulses due to noise or disturbances are avoided. A bandpass filter, an automatic gain control and an integrator stage is used to suppress such disturbances. The distinguishing marks between data signal and disturbance are carrier frequency, burst length and the envelope duty cycle. The data signal should fullfill the following conditions: * The carrier frequency should be close to 455 kHz. * The burstlength should be at least 22 s (10 cycles of the carrier signal) and shorter than 500 s. * The separation time between two consecutive bursts should be at least 26 s. * If the data bursts are longer than 500 s then the envelope duty cycle is limited to 25 % * The duty cycle of the carrier signal (455 kHz) may be between 50 % (1.1 s pulses) and 10 % (0.2 s pulses). The lower duty cycle may help to save battery power.
Document Number 82221 Rev. 1.1, 01-Mar-05
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TSOP7000SW1
Vishay Semiconductors Package Dimensions in mm
18016
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Document Number 82221 Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82221 Rev. 1.1, 01-Mar-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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